Normally-Off-[Formula Omitted]-Ga2O3 Power MOSFET With Ferroelectric Charge Storage Gate Stack Structure

In this work, we have demonstrated normally-off [Formula Omitted] metal-oxide-semiconductor field-effect transistor (MOSFET) with the ferroelectric charge storage gate stack structure. Saturation currents of 18.3 and 16.0 mA/mm were achieved in Depletion (D–) and Enhancement (E–) mode device, respec...

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Bibliographic Details
Published in:IEEE electron device letters 2020-01, Vol.41 (3), p.333
Main Authors: Feng, Zhaoqing, Qian, Feng, Zhou, Hong, Zhang, Jincheng, Yue Hao, Tian, Xusheng, Li, Zhe, Hu, Zhuangzhuang, Zhang, Yanni, Kang, Xuanwu, Ning, Jing, Zhang, Yachao, Zhang, Chunfu
Format: Article
Language:English
Subjects:
Depletion
Ferroelectric materials
Ferroelectricity
Field effect transistors
Gallium oxides
MOSFETs
Semiconductor devices
Threshold voltage
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Summary:In this work, we have demonstrated normally-off [Formula Omitted] metal-oxide-semiconductor field-effect transistor (MOSFET) with the ferroelectric charge storage gate stack structure. Saturation currents of 18.3 and 16.0 mA/mm were achieved in Depletion (D–) and Enhancement (E–) mode device, respectively, which shows negligible current reduction. Steep subthreshold swing (SS) of 72 mV/dec and breakdown voltage of 670 V were also obtained in the E-mode MOSFET. Furthermore, after gate stess test of 10 V for 105 s was performed, the threshold voltage [Formula Omitted] shift was 26.5 %. These electrical characteristics of the E-mode [Formula Omitted] MOSFET shows the great potential for future power switch application.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2020.2970066