Characterization of silicon oxynitride films deposited by a high-power impulse magnetron sputtering deposition technique

In this research, silicon oxynitride films were prepared by high-power impulse magnetron sputtering with 45/955 pulse on/off time. The extinction coefficient was smaller than 1×10 from 250 to 700 nm after introducing 2.2 sccm gas at room temperature. A three-layer of / AR coating was designed and fa...

Full description

Saved in:
Bibliographic Details
Published in:Applied optics (2004) 2020-02, Vol.59 (5), p.A176
Main Authors: Liao, Bo-Huei, Hsiao, Chien-Nan, Shiao, Ming-Hua, Chen, Sheng-Hui
Format: Article
Language:English
Subjects:
Aluminum fluorides
Coating
Hard surfacing
Hardness
Magnetron sputtering
Optical properties
Room temperature
Silicon oxynitride
Surface roughness
Transmittance
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this research, silicon oxynitride films were prepared by high-power impulse magnetron sputtering with 45/955 pulse on/off time. The extinction coefficient was smaller than 1×10 from 250 to 700 nm after introducing 2.2 sccm gas at room temperature. A three-layer of / AR coating was designed and fabricated on double-sided quartz, and a high transmittance of 99.2% was attained at 248 nm. The silicon oxynitride films deposited at 350°C had the better mechanical and optical properties in the visible range. The hardness of all deposited films was greater than 19 GPa, and the greatest hardness could reach to 29.8 GPa. A film structure of six-layer transparent hard coating/glass/four-layer AR coating was designed and deposited. Its average transmittance was 96.0% in the visible range, while its hardness was 21 GPa and its surface roughness was 0.23 nm.
ISSN:1559-128X
2155-3165
DOI:10.1364/AO.377983