Room temperature oxidation of Si nanocrystals at dry and wet air

Oxidation of HF vapor-etched nanocrystalline silicon films, prepared by drop coating from nanocrystalline Si sol in acetonitrile, was studied. Oxidation of nanocrystalline silicon at room temperature in air with 5% and 86% relative humidity was observed by means of infrared spectroscopy for 2 days....

Full description

Saved in:
Bibliographic Details
Published in:Journal of nanoparticle research : an interdisciplinary forum for nanoscale science and technology 2020-03, Vol.22 (3), Article 54
Main Authors: Popelensky, Vadim M., Dorofeev, Sergey G., Kononov, Nikolay N., Bubenov, Sergey S., Vinokurov, Alexander A.
Format: Article
Language:English
Subjects:
Acetonitrile
Air temperature
Characterization and Evaluation of Materials
Chemistry and Materials Science
Crystals
Infrared spectroscopy
Inorganic Chemistry
Lasers
Materials Science
Microbalances
Nanocrystals
Nanoparticles
Nanotechnology
Optical Devices
Optics
Oxidation
Photonics
Physical Chemistry
Quartz crystal microbalance
Quartz crystals
Relative humidity
Research Paper
Room temperature
Silicon
Silicon films
Thickness
Vibrations
Wet oxidation process
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Oxidation of HF vapor-etched nanocrystalline silicon films, prepared by drop coating from nanocrystalline Si sol in acetonitrile, was studied. Oxidation of nanocrystalline silicon at room temperature in air with 5% and 86% relative humidity was observed by means of infrared spectroscopy for 2 days. The change in film mass after 15 h of oxidation was determined using quartz crystal microbalance. In dry air, film mass and integral intensity of bands attributed to vibrations in Si 3 −  x –Si–H x and Si–O–Si groups changed linearly with time. In humid air, intensity of in Si 3 −  x –Si–H x band decays exponentially and intensity of Si–O–Si band increases as a square root of oxidation time. Film mass gain after 15 h of oxidation corresponds to an average oxide layer thickness of 0.02 nm in dry air and 0.51 nm in wet air.
ISSN:1388-0764
1572-896X
DOI:10.1007/s11051-020-4762-4