Use of Ga2O3[1 0 0] monocrystals as substrates for the synthesis of GaFeO3 thin films

•Thermal annealing of capped FeGa on Ga2O3[1 0 0] monocrystals.•Surface damage is avoided in the temperature range between 200 °C and 400 °C.•Indications of GaFeO3 have been obtained by X-ray diffractometry and magnetometry. The aim of this work is to explore the use of thermal oxidation for the syn...

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Bibliographic Details
Published in:Materials letters 2020-02, Vol.261, p.126949, Article 126949
Main Authors: Abad, S., Vásquez, G.C., Vines, L., Ranchal, R.
Format: Article
Language:English
Subjects:
Annealing
Coercivity
GaFeO3
Gallium oxides
Hysteresis loops
Magnetic properties
Magnetoelectricity
Materials science
Oxidation
Single crystals
Structural properties
Substrates
Synthesis
Thin films
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Summary:•Thermal annealing of capped FeGa on Ga2O3[1 0 0] monocrystals.•Surface damage is avoided in the temperature range between 200 °C and 400 °C.•Indications of GaFeO3 have been obtained by X-ray diffractometry and magnetometry. The aim of this work is to explore the use of thermal oxidation for the synthesis of GaFeO3 (GFO) thin films, by employing ex-situ annealed samples comprised of sputtered Fe72Ga28 layers deposited on top of Ga2O3[1 0 0] monocrystals. To avoid Ga evaporation, Fe72Ga28 were capped with 60 nm-thick Mo. No surface damaged was observed when annealed between 200 °C and 400 °C. Indications of GFO formation have been obtained by X-ray diffractometry in samples with a FeGa thickness of 560 nm annealed at 300 °C and 400 °C. The hysteresis loops exhibit a coercive field close to the reported value for GFO when annealed at 400 °C. All the experimental results encourage the application of this growth routine to synthetize high quality GFO thin films.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2019.126949