Raman Scattering of CuIn0.95Ga0.05Se2 Films Obtained by the Selenization Method

The CuIn 0.95 Ga 0.05 Se 2 films 0.6 – 1.5 μm thick have been prepared at selenization temperatures from 300°C to 500°C and studied by Raman spectroscopy methods. The interval of the selenization temperatures and the minimum thickness of the metal layer necessary for the preparation of a high-qualit...

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Bibliographic Details
Published in:Russian physics journal 2020, Vol.62 (9), p.1674-1678
Main Authors: Gadzhiev, T. M., Bilalov, B. A., Aliev, M. A., Gadzhieva, R. M., Aliev, G. A.
Format: Article
Language:English
Subjects:
Condensed Matter Physics
Converters
Hadrons
Heavy Ions
Lasers
Mathematical and Computational Physics
Nuclear Physics
Optical Devices
Optics
Photonics
Photosensitivity
Physics
Physics and Astronomy
Raman spectra
Raman spectroscopy
Solar radiation
Theoretical
Thickness
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Summary:The CuIn 0.95 Ga 0.05 Se 2 films 0.6 – 1.5 μm thick have been prepared at selenization temperatures from 300°C to 500°C and studied by Raman spectroscopy methods. The interval of the selenization temperatures and the minimum thickness of the metal layer necessary for the preparation of a high-quality thin CuIn 0.95 Ga 0.05 Se 2 film are established. It is shown that the CuIn 0.95 Ga 0.05 Se 2 films prepared by the proposed technology can successfully be used as an active photosensitive layer of highly efficient solar radiation converters.
ISSN:1064-8887
1573-9228
DOI:10.1007/s11182-020-01891-1