Dual-Band Half Mode Substrate Integrated Waveguide Filter With Independently Tunable Bands

In this brief, a dual-mode dual-band filter based on half-mode substrate integrated waveguide (HMSIW) is presented. The proposed filter has the capability to tune the two pass-bands independently. The proposed filter consists of two HMSIW resonators coupled through a pair of E-shaped coupling slots....

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on circuits and systems. II, Express briefs Express briefs, 2020-02, Vol.67 (2), p.285-289
Main Authors: Iqbal, Amjad, Tiang, Jun Jiat, Lee, Ching Kwang, Mallat, Nazih Khaddaj, Wong, Sai Wai
Format: Article
Language:English
Subjects:
Banded structure
bandpass filter
Bandwidth
Couplings
Dual band
Insertion loss
Planar structures
Resonant frequency
Resonators
Substrate integrated waveguide (SIW) filter
Substrate integrated waveguides
tunable filter
Tuning
Varactor diodes
Varactors
Waveguide filters
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this brief, a dual-mode dual-band filter based on half-mode substrate integrated waveguide (HMSIW) is presented. The proposed filter has the capability to tune the two pass-bands independently. The proposed filter consists of two HMSIW resonators coupled through a pair of E-shaped coupling slots. Two resonating modes (TE 101 and TE 102 ) are excited in each resonator. A varactor diode is used in the proposed filter for tuning purpose. The varactor diode is placed in the structure in such a way that both bands can be tuned independently. The lower passband can be tuned from 3.26 to 3.47 GHz with insertion loss of 0.2-2.9 dB. The higher passband can be tuned from 5.47 to 6.13 GHz with low insertion loss of 0.1-2.1 dB. The presented results show the flexibility of the filter to achieve desired responses and its suitability for integration with any tunable planar structure. A good agreement between the simulated and measured results is observed.
ISSN:1549-7747
1558-3791
DOI:10.1109/TCSII.2019.2911014