Beyond 53% internal quantum efficiency in a AlGaN quantum well at 326 nm UVA emission and single-peak operation of UVA LED

AlGaN-based ultraviolet-A (UVA) light-emitting-diodes (LEDs) at emission under 330 nm are of great importance for numerous applications, including medicine and photochemical technologies. In this Letter, a highly relaxed n-AlGaN electron injection layer (EIL) underneath the multi-quantum wells (MQWs...

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Bibliographic Details
Published in:Optics letters 2020-01, Vol.45 (2), p.495
Main Authors: Khan, M. Ajmal, Takeda, Ryohei, Yamada, Yoichi, Maeda, Noritoshi, Jo, Masafumi, Hirayama, Hideki
Format: Article
Language:English
Subjects:
Confinement
Dislocation density
Emission
Light emitting diodes
Multi Quantum Wells
Organic light emitting diodes
Piezoelectricity
Quantum efficiency
Quantum transport
Threading dislocations
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Summary:AlGaN-based ultraviolet-A (UVA) light-emitting-diodes (LEDs) at emission under 330 nm are of great importance for numerous applications, including medicine and photochemical technologies. In this Letter, a highly relaxed n-AlGaN electron injection layer (EIL) underneath the multi-quantum wells (MQWs) for the suppression of both threading dislocation densities and piezoelectric effect was attempted. When the Ga-rich n-AlGaN EIL in the UVA LED was relaxed up to 75%, the full width at half-maximum values of the X-ray rocking curves for the (10–12) planes were reduced from our previous value of approximately 793 to 564 arcsec. Subsequently, a maximum light power of 3.1 mW was achieved in the 326 nm band UVA LED. However, carrier confinement and transport issues in the MQWs were observed. To resolve these issues of carrier confinement and transport, we provide a short roadmap for experimental efforts to realize an internal quantum efficiency (IQE) beyond 53% in AlGaN UVA-MQWs.
ISSN:0146-9592
1539-4794
DOI:10.1364/OL.376894