Phase structure, microstructure and electrical properties of PCNS–PZ–PT ternary ceramics near the morphotropic phase boundary

In the present study, (0.54 −  x )Pb(Cr 1/5 ,Ni 1/5 ,Sb 3/5 )O 3 -0.46PbZrO 3 - x PbTiO 3 ceramic powders were synthesized by the conventional solid-state reaction process (where x  = 0.42, 0.44, 0.46, 0.48 and 0.50). The obtained samples have been characterized using different techniques such as X-...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2020, Vol.126 (1), Article 32
Main Authors: Meklid, Abdelhek, Hachani, Salah Eddine, Necira, Zelikha, Menasra, Hayet, Abba, Malika, Boutarfaia, Ahmed
Format: Article
Language:English
Subjects:
Applied physics
Ceramic powders
Ceramics
Characterization and Evaluation of Materials
Condensed Matter Physics
Dielectric properties
Electrical properties
Grain size
Machines
Manufacturing
Materials science
Nanotechnology
Optical and Electronic Materials
Phase boundaries
Physics
Physics and Astronomy
Processes
Raman spectroscopy
Sintering (powder metallurgy)
Solid phases
Surfaces and Interfaces
Thin Films
Titanium
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Summary:In the present study, (0.54 −  x )Pb(Cr 1/5 ,Ni 1/5 ,Sb 3/5 )O 3 -0.46PbZrO 3 - x PbTiO 3 ceramic powders were synthesized by the conventional solid-state reaction process (where x  = 0.42, 0.44, 0.46, 0.48 and 0.50). The obtained samples have been characterized using different techniques such as X-ray Diffraction (XRD) which reveals that the samples consist of a mixture of tetragonal and rhombohedral phases (morphotropic phase boundary MPB) in the range of 0.46 ≤  x  ≤ 0.48, scanning electron microscopy (SEM) which shows an increase of the average grain size in the morphotropic phase boundary, dielectric measurements and Raman spectroscopy have been performed to get more insights into the effects of titanium dopant (Ti) content on the properties of PCNS–PZ–PT ceramics near the morphotropic phase boundary (MPB). It was found that the ceramic sintered at 1180 °C with Ti = 46% achieves excellent dielectric properties ( ε r  = 17,641.58, tan  δ  = 0.120 and T c  = 576 K).
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-019-3209-1