Stimulated Emission at a Wavelength of 2.86 μm from In(Sb, As)/In(Ga, Al)As/GaAs Metamorphic Quantum Wells under Optical Pumping

Metamorphic laser heterostructures In(Sb, As)/In 0.81 Ga 0.19 As/In 0.75 Al 0.25 As with InSb/InAs/InGaAs composite quantum wells based on submonolayer InSb insertions in a 10-nm InAs layer have been grown by molecular beam epitaxy on GaAs (001) substrates. Stimulated emission at a wavelength of λ ~...

Full description

Saved in:
Bibliographic Details
Published in:JETP letters 2019-09, Vol.110 (5), p.313-318
Main Authors: Solov’ev, V. A., Chernov, M. Yu, Morozov, S. V., Kudryavtsev, K. E., Sitnikova, A. A., Ivanov, S. V.
Format: Article
Language:English
Subjects:
Atomic
Biological and Medical Physics
Biophysics
Emission
Epitaxial growth
Gallium arsenide
Heterostructures
Indium antimonide
Indium arsenides
Indium gallium arsenides
Intermetallic compounds
Laser pumping
Molecular
Molecular beam epitaxy
Optical and Plasma Physics
Optical pumping
Optics and Laser Physics
Particle and Nuclear Physics
Physics
Physics and Astronomy
Quantum Information Technology
Quantum wells
Solid State Physics
Spintronics
Stimulated emission
Substrates
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Metamorphic laser heterostructures In(Sb, As)/In 0.81 Ga 0.19 As/In 0.75 Al 0.25 As with InSb/InAs/InGaAs composite quantum wells based on submonolayer InSb insertions in a 10-nm InAs layer have been grown by molecular beam epitaxy on GaAs (001) substrates. Stimulated emission at a wavelength of λ ~ 2.86 μm at temperatures of 10–60 K at optical pumping has been demonstrated in such structures without an optical cavity. The threshold pump power density is about 5 kW/cm 2 at a temperature of 10 K.
ISSN:0021-3640
1090-6487
DOI:10.1134/S0021364019170120