Stability and Reliability of Lateral GaN Power Field-Effect Transistors

GaN electronics constitutes a revolutionary technology with power handling capabilities that amply exceed those of Si and other semiconductors in many applications. RF, microwave, and millimeter-wave GaN-based power amplifiers are now deployed in commercial communications, radar, and sensing systems...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2019-11, Vol.66 (11), p.4578-4590
Main Authors: del Alamo, Jesus A., Lee, Ethan S.
Format: Article
Language:English
Subjects:
AlGaN
Aluminum gallium nitride
Electronics
Field effect transistors
Gallium nitride
Gallium nitrides
GaN
HEMTs
Integrated circuit reliability
Lateral stability
Logic gates
Millimeter waves
Power amplifiers
Power management
Power semiconductor devices
power transistors
Product development
Reliability
Semiconductor devices
stability
Transistors
Wide band gap semiconductors
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Summary:GaN electronics constitutes a revolutionary technology with power handling capabilities that amply exceed those of Si and other semiconductors in many applications. RF, microwave, and millimeter-wave GaN-based power amplifiers are now deployed in commercial communications, radar, and sensing systems. GaN power transistors for electrical power management are also starting to reach the marketplace. From the dawn of this technology, inadequate transistor stability and reliability have represented stumbling blocks preventing widespread commercial use of GaN electronics. Intense research has been devoted to addressing these issues, and great progress has taken place recently. This article reviews some of the most interesting and significant stability and reliability issues that have plagued GaN power field-effect transistors for RF and power management applications.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2019.2931718