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Residual stress effect on the fracture toughness of lithium disilicate glass‐ceramics
In glass‐ceramics (GCs), on cooling from the crystallization temperature, internal residual stresses are generated due to the difference between the thermal expansion coefficient (TEC) of the crystal phase(s) and the residual glass. These stresses could degrade or promote their mechanical properties...
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Published in: | Journal of the American Ceramic Society 2020-01, Vol.103 (1), p.465-479 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | In glass‐ceramics (GCs), on cooling from the crystallization temperature, internal residual stresses are generated due to the difference between the thermal expansion coefficient (TEC) of the crystal phase(s) and the residual glass. These stresses could degrade or promote their mechanical properties. In this work, we varied the magnitude of the residual stresses in lithium silicate GCs by designing their microstructures. The level of internal stresses was measured using (Synchrotron) X‐ray diffraction. The effects of anisotropy of thermal expansion, crystal shape, and intensity of the residual stresses were analyzed and compared using theoretical models. We extended the Hsueh‐Becher model to include the thermal expansion anisotropy of the orthorhombic lithium disilicate (LS2) crystals. We found that the average residual stresses within the LS2 crystals are compressive or null (−100 to ~0) and highly anisotropic. Most importantly, within the limits of this study, we found no evidence for the influence of (compressive or null) residual stresses on the fracture toughness of the studied GCs. Within the crystal size range from 1 to 5 μm, a highly crystallized volume fraction coupled to relatively large crystals (5 μm) of high elastic modulus improved the glass‐ceramic fracture toughness. This result can guide the microstructural design of novel tough GCs. |
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ISSN: | 0002-7820 1551-2916 |
DOI: | 10.1111/jace.16664 |