Electric-field tuning of nonvolatile resistance change and magnetic properties of LaMnO3/PMN-PT(0 1 1) heterostructure

•In situ reversible tuning of resistance is achieved in LaMnO3/PMN-PT(0 1 1) structure.•Non-180° domain switching-induced strain causes nonvolatile resistance tuning.•In-plane tensile stain contributes to the weakened magnetization. The electric-field control of resistance change (ΔR/R) and magnetic...

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Bibliographic Details
Published in:Materials letters 2019-11, Vol.254, p.89-91
Main Authors: Huang, Xiao-Hua, Xu, Meng, Xu, Zhi-Xue, Yan, Jian-Min, Zheng, Ren-Kui
Format: Article
Language:English
Subjects:
Coercivity
Electric fields
Electrical properties
Epitaxial growth
Freezing
Heterostructures
High resistance
Jahn-Teller effect
Lanthanum compounds
Lattice strain
Magnetic properties
Magnetism
Manganite film
Materials science
Piezoelectric materials
PMN-PT single crystal
Substrates
Tensile strain
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Summary:•In situ reversible tuning of resistance is achieved in LaMnO3/PMN-PT(0 1 1) structure.•Non-180° domain switching-induced strain causes nonvolatile resistance tuning.•In-plane tensile stain contributes to the weakened magnetization. The electric-field control of resistance change (ΔR/R) and magnetic properties has been investigated in the LaMnO3(LMO)/0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT)(0 1 1) heterostructure. When the unipolar electric field (E) increases beyond the coercive field of PMN-PT, the ΔR/R vs E curve transforms from a loop-like behavior to a butterfly-like one. The electric-field-induced non-linear strain effect in the PMN-PT substrate realizes the modulation between low and high resistance states at room temperature. Moreover, different freezing temperatures of the LMO film are observed as the PMN-PT substrate is in the fully negative (Pr-) and partially positive (Pr//) polarization states. The observation of less magnetization for Pr// state than that for Pr- state indicates that the in-plane tensile strain is beneficial to the Jahn-Teller distortion.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2019.07.035