Effects of Al2O3 Capping and Post-Annealing on the Conduction Behavior in Few-Layer Black Phosphorus Field-Effect Transistors

Ambient instability has been proven challenging in black phosphorus field-effect transistors (BP FETs) and a capping layer is thus needed for their practical applications. In this paper, we have examined the effects of Al 2 O 3 capping and O 2 post-annealing on the conduction characteristic of BP FE...

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Bibliographic Details
Published in:IEEE journal of the Electron Devices Society 2018-01, Vol.6, p.320-324
Main Authors: Zheng, H. M., Zhang, David W., Gao, J., Sun, S. M., Ma, Q., Wang, Y. P., Zhu, B., Liu, W. J., Lu, H. L., Ding, S. J.
Format: Article
Language:English
Subjects:
Aluminum oxide
ambipolar
Annealing
Black phosphorus
Capping
Dopes
Doping
Electron mobility
Field effect transistors
Logic gates
Phosphorus
Semiconductor devices
Transistors
Transport
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Summary:Ambient instability has been proven challenging in black phosphorus field-effect transistors (BP FETs) and a capping layer is thus needed for their practical applications. In this paper, we have examined the effects of Al 2 O 3 capping and O 2 post-annealing on the conduction characteristic of BP FETs. With the Al 2 O 3 capping, it forms p-type into ambipolar transport and the electron mobility dramatically increases to 20-110 cm 2 /V·s in our case. Interestingly, with the O 2 post-annealing, the transport can be tuned from ambipolar back to p-type as the annealing time extends. It is attributed that the Al 2 O 3 capping introduces an n-type doping in BP channel while the O 2 post-annealing dopes BP back into p-type. Moreover, after the O 2 post-annealing the interfacial POx might be formed, resulting in the degradation of subthreshold swing and on/off current ratio.
ISSN:2168-6734
DOI:10.1109/JEDS.2018.2804481