Fabricating GaN-based LEDs on (−2 0 1) β-Ga2O3 substrate via non-continuous/continuous growth between low-temperature undoped-GaN and high-temperature undoped-GaN in atmospheric pressure metal-organic chemical vapor deposition

This study demonstrates two approaches to the growth of GaN-based LEDs on (−2 0 1)-oriented β-Ga2O3 single crystal substrates using metal-organic CVD under atmospheric pressure. One approach induces non-continuous growth between low-temperature undoped-GaN (u-GaN) and high-temperature u-GaN, whereas...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2019-10, Vol.58 (10), p.100908
Main Authors: Lan, Yu-Pin, Chen, Yen-Chun, Yeh, Yi-Yun, Hung, Shun-Ming
Format: Article
Language:English
Subjects:
Atmospheric pressure
Chemical vapor deposition
Crystal structure
Gallium nitrides
Gallium oxides
High temperature
Low temperature
Metalorganic chemical vapor deposition
Organic chemicals
Organic chemistry
Quantum wells
Single crystals
Substrates
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Summary:This study demonstrates two approaches to the growth of GaN-based LEDs on (−2 0 1)-oriented β-Ga2O3 single crystal substrates using metal-organic CVD under atmospheric pressure. One approach induces non-continuous growth between low-temperature undoped-GaN (u-GaN) and high-temperature u-GaN, whereas the other approach induces continuous growth. We observed the following reduction in the FWHM of X-ray diffraction rocking curves: GaN (0 0 2) on (−2 0 1) β-Ga2O3 substrate (from 464 to 342 arcsec) and GaN (1 0 2) (from 886 to 493 arcsec). An LED with six pairs of InGaN/GaN multiple quantum wells was successfully fabricated on the (−2 0 1) β-Ga2O3 single crystal substrate.
ISSN:0021-4922
1347-4065
DOI:10.7567/1347-4065/ab3ff5