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Mass Production of High‐Quality Transition Metal Dichalcogenides Nanosheets via a Molten Salt Method
2D transition metal dichalcogenides (TMDs) are well suited for energy storage and field–effect transistors because of their thickness‐dependent chemical and physical properties. However, as current synthetic methods for 2D TMDs cannot integrate both advantages of liquid‐phase syntheses (i.e., massiv...
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Published in: | Advanced functional materials 2019-08, Vol.29 (35), p.n/a |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | 2D transition metal dichalcogenides (TMDs) are well suited for energy storage and field–effect transistors because of their thickness‐dependent chemical and physical properties. However, as current synthetic methods for 2D TMDs cannot integrate both advantages of liquid‐phase syntheses (i.e., massive production and homogeneity) and chemical vapor deposition (i.e., high quality and large lateral size), it still remains a great challenge for mass production of high‐quality 2D TMDs. Here, a molten salt method to massively synthesize various high‐crystalline TMDs nanosheets (MoS2, WS2, MoSe2, and WSe2) with the thicknesses less than 5 nm is reported, with the production yield over 68% with the reaction time of only several minutes. Additionally, the thickness and size of the as‐synthesized nanosheets can be readily controlled through adjusting reaction time and temperature. The as‐synthesized MoSe2 nanosheets exhibit good electrochemical performance as pseudocapacitive materials. It is further anticipates that this work will provide a promising strategy for rapid mass production of high‐quality nonoxides nanosheets for energy‐related applications and beyond.
High‐crystalline transition metal dichalcogenides nanosheets (including MoS2, WS2, MoSe2, and WSe2) can be mass produced with a reaction time of only several minutes through a molten salt method. |
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ISSN: | 1616-301X 1616-3028 |
DOI: | 10.1002/adfm.201900649 |