Investigation of the Current–Voltage Characteristics of New MnO2/GaAs(100) and V2O5/GaAs(100) Heterostructures Subjected to Heat Treatment

Complex oxide films with a thickness of about 200 nm are formed during the thermal oxidation of GaAs with magnetron-deposited V 2 O 5 and MnO 2 nanolayers. The electrical parameters of the films (reverse-bias breakdown voltage and current density) are determined by the method of current–voltage ( I...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2019-08, Vol.53 (8), p.1054-1059
Main Authors: Sladkopevtsev, B. V., Kotov, G. I., Arsentyev, I. N., Shashkin, I. S., Mittova, I. Ya, Tomina, E. V., Samsonov, A. A., Kostenko, P. V.
Format: Article
Language:English
Subjects:
Arsenic
Bias
Breakdown
Chemical bonds
Current voltage characteristics
Heat treatment
Heterostructures
Low-Dimensional Systems
Magnetic Materials
Magnetism
Manganese dioxide
Morphology
Organic chemistry
Oxidation
Oxide coatings
Physics
Physics and Astronomy
Quantum Phenomena
Semiconductor Structures
Thickness
Vanadium pentoxide
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Summary:Complex oxide films with a thickness of about 200 nm are formed during the thermal oxidation of GaAs with magnetron-deposited V 2 O 5 and MnO 2 nanolayers. The electrical parameters of the films (reverse-bias breakdown voltage and current density) are determined by the method of current–voltage ( I – V ) characteristics at room temperature in the bias range from –5 to +5 V, and their composition and surface morphology are investigated. It is shown that V 2 O 5 facilitates the more intense (in comparison with MnO 2 ) chemical bonding of arsenic at the internal interface with the formation of As 2 O 5 . As a result, thermally oxidized V 2 O 5 /GaAs heterostructures exhibit higher breakdown voltages.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782619080177