Impact of interlayer coupling on magnetic skyrmion size

•Effect of RKKY interaction on skyrmion size is investigated.•Formation of large or small sized skyrmions is strongly dependent on the type of the RKKY coupling.•Interlayer coupling induced skyrmions are formed in the layer without intrinsic DMI.•Zero field skyrmions are observed with spin spiral st...

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Bibliographic Details
Published in:Journal of magnetism and magnetic materials 2019-11, Vol.489, p.165399, Article 165399
Main Authors: Deger, C., Yavuz, I., Yildiz, F.
Format: Article
Language:English
Subjects:
Antiferromagnetism
Coupling
Damping
Ferromagnetism
Hypothetical particles
Interlayers
Magnetic fields
Memory devices
Particle theory
Thin films
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Summary:•Effect of RKKY interaction on skyrmion size is investigated.•Formation of large or small sized skyrmions is strongly dependent on the type of the RKKY coupling.•Interlayer coupling induced skyrmions are formed in the layer without intrinsic DMI.•Zero field skyrmions are observed with spin spiral state. We study the magnetic skyrmion formation in thin-film stacks, consist of two magnetic layers separated by a non-magnetic spacer. The Landau-Lifshitz-Gilbert equation, comprising the spin precession term and the damping term with all relevant contributions, is numerically solved within the micromagnetic framework. Through extensive systematic calculations, we find that skyrmion size can be controlled by the interlayer exchange coupling, as well as the external magnetic field. z-component of the magnetization of the layers, which can be tailored by the coupling, strongly affects the skyrmion diameter. The skyrmion phase coexists with the helical phase for both types of coupling, being antiferromagnetic or ferromagnetic, in the absence of the magnetic field. The size of the skyrmions at zero field can also be controlled by the interaction. We anticipate that our predictions not only expand our fundamental understanding of the physical mechanisms responsible for skyrmion formation but also provide rational basis for the next-generation logic/memory device applications.
ISSN:0304-8853
1873-4766
DOI:10.1016/j.jmmm.2019.165399