Highly sensitive free-base-porphyrin-based thin-film optical waveguide sensor for detection of low concentration NO2 gas at ambient temperature

Meso-5,10,15,20-tetrakis-(4-tertbutyl phenyl) porphyrin was synthesized using Adler–Longo method and was served as sensing material. Electronic absorption spectra of the porphyrin chloroform solution and its thin film were studied comparatively. An optical waveguide sensor based on free-base porphyr...

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Bibliographic Details
Published in:Journal of materials science 2018-08, Vol.53 (15), p.10822-10834
Main Authors: Abudukeremu, Hannikezi, Kari, Nuerguli, Zhang, Yuan, Wang, Jiaming, Nizamidin, Patima, Abliz, Shawket, Yimit, Abliz
Format: Article
Language:English
Subjects:
Absorption spectra
Ambient temperature
Characterization and Evaluation of Materials
Chemical Routes to Materials
Chemistry and Materials Science
Chloroform
Classical Mechanics
Crystallography and Scattering Methods
Detection
Exposure
Film thickness
Hydrogen sulfide
Materials Science
Morphology
Nitrogen dioxide
Optical waveguides
Polymer Sciences
Recovery time
Response time
Scanning electron microscopy
Selectivity
Sensors
Solid Mechanics
Spin coating
Thickness measurement
Thin films
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Summary:Meso-5,10,15,20-tetrakis-(4-tertbutyl phenyl) porphyrin was synthesized using Adler–Longo method and was served as sensing material. Electronic absorption spectra of the porphyrin chloroform solution and its thin film were studied comparatively. An optical waveguide sensor based on free-base porphyrin was fabricated by spin coating method. Absorption variation of porphyrin film was studied before and after exposure to NO 2 , H 2 S, SO 2 , and volatile organic gases. XRD patterns of porphyrin film before and after exposure to analytes (NO 2 , SO 2 , and H 2 S) were provided, and light source of the OWG testing system was selected. This facile-prepared sensor exhibited high sensitivity and selectivity to NO 2 with fast response time of 3 s and slow recovery time of 10 min or so and was capable of measuring NO 2 down to 10 ppb at ambient temperature. Scanning electron microscopy was employed to characterize film morphology before and after contact with NO 2 . Film thickness was measured before (71.3 nm) and after (76.8 nm) exposure to NO 2 , and film thickness variation value (5.20 nm) was calculated. The sensing behavior of the studied sensing device was tested through mixture of H 2 S, SO 2 , and VOC gases with NO 2 and without NO 2 for determination of the selectivity of the device. Film stability was probed by UV–Vis spectra, and response values of sensing element to NO 2 gas were detected after several days of film preparation, and its RSD value was 1.66%.
ISSN:0022-2461
1573-4803
DOI:10.1007/s10853-018-2374-5