Effects of Zn-doping on structure and electrical properties of p-type conductive CuCr1−x Zn x O2 delafossite oxide

Delafossite-type CuCr₁₋ₓ Zn ₓ O₂ (x = 0, 0.03, 0.05, 0.07, 0.1) conductive oxides were synthesized by sol–gel method, and the effects of Zn-doping on morphology, structure, and electrical properties of the CuCr₁₋ₓ Zn ₓ O₂ oxides were investigated. Based on X-ray diffraction (XRD) and Raman spectrum,...

Full description

Saved in:
Bibliographic Details
Published in:Journal of materials science 2016-04, Vol.51 (7), p.3592-3599
Main Authors: Chuai, Ya-Hui, Wang, Xin, Shen, Hong-Zhi, Li, Ya-Dan, Zheng, Chuan-Tao, Wang, Yi-Ding
Format: Article
Language:English
Subjects:
Activation energy
Chromium
copper
Doping
electrical conductivity
Electrical properties
Electrical resistivity
electrodes
industry
Materials science
Morphology
Optoelectronics
Organic chemistry
Oxides
Photoelectrons
Polarons
Seebeck effect
Sol-gel processes
sol-gel processing
Spectrum analysis
Temperature dependence
X ray photoelectron spectroscopy
X-ray diffraction
Zinc
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Delafossite-type CuCr₁₋ₓ Zn ₓ O₂ (x = 0, 0.03, 0.05, 0.07, 0.1) conductive oxides were synthesized by sol–gel method, and the effects of Zn-doping on morphology, structure, and electrical properties of the CuCr₁₋ₓ Zn ₓ O₂ oxides were investigated. Based on X-ray diffraction (XRD) and Raman spectrum, the crystalline quality of the oxides is improved by the suitable substitution of Cr by Zn. The X-ray photoelectron spectroscopy (XPS) spectra reveal the chemical state of Zn is +2. The Hall and Seebeck coefficients of the pellet samples display a positive sign, indicating p-type conductive characteristics of the obtained oxides. The temperature-dependent resistivity of the oxides is proven to be consistent with small polaron hopping. For the three oxide samples with x = 0, 0.05, and 0.1, the activation energies for the polaron hopping between Zn²⁺ and Cr³⁺ sites are 54, 41.5, 32 meV, respectively, which is found to decrease with the increase of Zn content. The electrical conductivity can be remarkably improved by Zn-doping due to the small polaron hopping activation energy. These properties render this material promising as transparent electrode in optoelectronic industry.
ISSN:0022-2461
1573-4803
DOI:10.1007/s10853-015-9679-4