Fabrication and properties of P3HT: PCBM/Cu2SnSe3 (CTSe) nanocrystals based inverted hybrid solar cells

•The P3HT:PCBM/Cu2SnSe3 (CTSe) based inverted hybrid solar cells were fabricated.•The various wt% of CTSe NCs were incorporated as a additive in P3HT:PCBM polymer matrix to optimize maximum power conversion.•The fabricated solar cell with structure ITO/ZnO/P3HT: PCBM: CTSe (10 wt%) NCs/Ag has showed...

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Bibliographic Details
Published in:Solar energy 2019-07, Vol.187, p.167-174
Main Authors: Dwivedi, Shailendra Kumar, Tiwari, D.C., Tripathi, Santosh K., Dwivedi, Prabhat K., Dipak, P., Chandel, Tarun, Prasad, N. Eswara
Format: Article
Language:English
Subjects:
Acceptor materials
Carrier recombination
Centrifugal casting
Charge transfer
Circuits
Cu2SnSe3 nanocrystals
Current carriers
EIS
Electrochemical impedance spectroscopy
Electrochemistry
Energy conversion efficiency
Fabrication
Hybrid solar cell
Nanocrystals
Open circuit voltage
P3HT:PCBM
Photovoltaic cells
Recombination
Short circuit currents
Solar cells
Solar energy
Spectroscopy
Thin films
Zinc oxide
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Summary:•The P3HT:PCBM/Cu2SnSe3 (CTSe) based inverted hybrid solar cells were fabricated.•The various wt% of CTSe NCs were incorporated as a additive in P3HT:PCBM polymer matrix to optimize maximum power conversion.•The fabricated solar cell with structure ITO/ZnO/P3HT: PCBM: CTSe (10 wt%) NCs/Ag has showed the enhanced photo conversion efficiency and CTSe is non toxic material. Thin film solar cells with ITO/ZnO/P3HT:PCM:CTSe NCs/Ag structure were fabricated employing a fast and cost-effective procedure using blended solution of P3HT:PCBM:CTSe NCs deposited by spin casting, followed by thermal annealing steps. The CTSe NCs are prepared via solvothermal method. An inverted architecture of device with structure ITO/ZnO/P3HT: PCBM:CTSe NCs/Ag have been fabricated with different concentration of CTSe NCs in poly(3-hexyle thiophene) (P3HT): [6,6]phenyl-C61-butyric-acid-methyl-ester (PCBM) matrix. The effect of CTSe NCs on the performance of hybrid solar cell with optimized blend ratio of P3HT:PCBM and CTSe NCs has been investigated for optimum power conversion. The charge carrier extraction and recombination at the interface of donor-acceptor material were studied using Electrochemical impedance spectroscopy (EIS) under dark condition. EIS study has demonstrated that the charge transfer rate was higher for the device having optimized wt% of CTSe NCs (10 wt%) in P3HT:PCBM active layer. A significant improvement in the device performances was observed on incorporation of CTSe NCs. The device exhibited open circuit voltage (Voc) of 0.475 V, short circuit current density (Jsc) of 6.95 mA/cm2, fill factor (FF) of 0.41 and power conversion efficiency (PCE) of 1.35%.
ISSN:0038-092X
1471-1257
DOI:10.1016/j.solener.2019.05.012