Third-order optical nonlinearity in nonstoichiometric amorphous silicon carbide films

This study investigated the third-order nonlinear optical properties of amorphous silicon carbide (SiC) films prepared via magnetron sputtering at room temperature (RT) and annealed at 200 °C–800 °C. The third-order optical nonlinearity was investigated by Z-scan measurement at a wavelength of 1064 ...

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Bibliographic Details
Published in:Journal of alloys and compounds 2019-07, Vol.794, p.518-524
Main Authors: Yu, Xiuru, Ding, Baoyong, Lu, Heng, Huo, Yanyan, Peng, Qianqian, Xiu, Xianwu, Zhang, Chao, Yang, Cheng, Jiang, Shouzhen, Man, Baoyuan, Ning, Tingyin
Format: Article
Language:English
Subjects:
Amorphous materials
Amorphous silicon
Annealing
Apertures
Defocusing
Magnetic properties
Magnetron sputtering
Nonlinearity
Optical properties
Photon absorption
Photovoltaic cells
Pulse duration
Refractivity
SiC film
Silicon carbide
Third-order optical nonlinearity
Z-scan
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Summary:This study investigated the third-order nonlinear optical properties of amorphous silicon carbide (SiC) films prepared via magnetron sputtering at room temperature (RT) and annealed at 200 °C–800 °C. The third-order optical nonlinearity was investigated by Z-scan measurement at a wavelength of 1064 nm and a pulse duration of 25 ps. The self-defocusing behaviour was observed in a large nonlinear refractive index n2 ∼10−14 m2/W, which was five orders of magnitude larger than the value of SiC crystals. By fitting the open-aperture data of the Z-scan, we determined the two- and three-photon absorption in the SiC films prepared at RT and in the annealed samples, respectively. The different nonlinear absorption behaviour was probably ascribed to the intermediate states between the conduction and valence bands. •SiC films without hydrogen were prepared at room temperature by magnetron sputtering.•The atom composition and bonds in SiC films can be influenced by annealing process.•Large nonlinear refractive index ∼10−14 m2/W in SiC films was determined at 1064 nm.•Two- and three-photon absorptionbehaviors in the SiC films were observed.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2019.04.215