Polyimide-based gate dielectrics for high-performance organic thin film transistors

In this work, polyimide-based novel polymer dielectric materials, containing a cross-linkable olefin group and a long alkyl chain with biphenyl, were designed and synthesized by a mild chemical synthesis method to avoid thermal imidization so that they can be widely utilized. The two novel polyimide...

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Bibliographic Details
Published in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2019, Vol.7 (24), p.7454-7459
Main Authors: Zou, Jiawei, Wang, He, Zhang, Xuehui, Wang, Xuesong, Shi, Zuosen, Jiang, Yuhang, Cui, Zhanchen, Yan, Donghang
Format: Article
Language:English
Subjects:
Carrier mobility
Chemical synthesis
Crosslinking
Current carriers
Dielectric loss
Dielectric properties
Leakage current
Morphology
Organic chemistry
Pinholes
Polymer films
Semiconductor devices
Thermal stability
Thin film transistors
Threshold voltage
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Summary:In this work, polyimide-based novel polymer dielectric materials, containing a cross-linkable olefin group and a long alkyl chain with biphenyl, were designed and synthesized by a mild chemical synthesis method to avoid thermal imidization so that they can be widely utilized. The two novel polyimide materials show good thermal stability, pinhole-free dense film morphologies, low leakage current densities (
ISSN:2050-7526
2050-7534
DOI:10.1039/c9tc02219h