Realization and Performance Analysis of Facile-Processed [Formula Omitted]-IDE-Based Multilayer HfS2/HfO2 Transistors

A new and interesting field-effect transistor (FET) structure based on multilayer HfS2 as a channel material, integrated with Al [Formula Omitted]-interdigitated electrodes ([Formula Omitted]-IDEs) and HfO2 as a gate dielectric is reported for the first time. The electrical performance of Al/HfO2/Hf...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2019-01, Vol.66 (7), p.3236
Main Authors: Sharma, Shivani, Das, Subhashis, Khosla, Robin, Shrimali, Hitesh, Sharma, Satinder K
Format: Article
Language:English
Subjects:
Current leakage
Electron mobility
Field effect transistors
Gates
Hafnium compounds
Hafnium oxide
Leakage current
Multilayers
Semiconductor devices
Threshold voltage
Transconductance
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Summary:A new and interesting field-effect transistor (FET) structure based on multilayer HfS2 as a channel material, integrated with Al [Formula Omitted]-interdigitated electrodes ([Formula Omitted]-IDEs) and HfO2 as a gate dielectric is reported for the first time. The electrical performance of Al/HfO2/HfS2/Al[Formula Omitted]-based FETs exhibited the threshold voltage of ~−2.72 V, generous subthreshold swing (SS) of ~70 mV/dec, substantial [Formula Omitted] ratio of ~104, transconductance of [Formula Omitted], a significantly high electron mobility of ~56.7cm2/Vs at [Formula Omitted] V, and low gate leakage current of ~47 nA/cm2 at [Formula Omitted] V. Therefore, moderate threshold voltage, generous SS, robust current saturation, ultralow off-state leakage current, and low operating voltage of the fabricated Al/HfO2/HfS2/Al[Formula Omitted], FETs show its potential for next-generation (NG) low-power FET applications.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2019.2917323