Origin of the Concentration Quenching of Luminescence in Zn2SiO4:Mn Phosphors

The analysis of the unified series of single-phase Zn 2 – 2 x Mn 2 x SiO 4 samples ( x ≤ 0.2) has provided the possibility to determine the optimal dopant concentration x = 0.13 for the maximum luminescence intensity. It has been established that the dominating mechanism of concentration luminescenc...

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Bibliographic Details
Published in:Physics of the solid state 2019-05, Vol.61 (5), p.806-810
Main Authors: Onufrieva, T. A., Krasnenko, T. I., Zaitseva, N. A., Baklanova, I. V., Rotermel’, M. V., Ivanova, I. V., Popov, I. D., Samigullina, R. F.
Format: Article
Language:English
Subjects:
Energy dissipation
Impurity Centers
Luminescence
Luminescence quenching
Manganese ions
Oxidation
Phosphors
Physics
Physics and Astronomy
Quenching
Solid State Physics
Zinc silicates
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Summary:The analysis of the unified series of single-phase Zn 2 – 2 x Mn 2 x SiO 4 samples ( x ≤ 0.2) has provided the possibility to determine the optimal dopant concentration x = 0.13 for the maximum luminescence intensity. It has been established that the dominating mechanism of concentration luminescence quenching and excitation energy dissipation is the oxidation of some Mn 2+ activating ions and the growth of defectness in the luminophore due to this process Phosphors.
ISSN:1063-7834
1090-6460
DOI:10.1134/S1063783419050238