2D Materials: Metal‐Guided Selective Growth of 2D Materials: Demonstration of a Bottom‐Up CMOS Inverter (Adv. Mater. 18/2019)

A method to concurrently and location‐selectively grow dissimilar transition‐metal dichalcogenides (TMDs) is of high importance for next‐generation 2D, nonsilicon electronics. In article number 1900861, Vincent Tung, Lain‐Jong Li, and co‐workers demonstrate that the precise control of transition‐met...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2019-05, Vol.31 (18), p.n/a
Main Authors: Chiu, Ming‐Hui, Tang, Hao‐Ling, Tseng, Chien‐Chih, Han, Yimo, Aljarb, Areej, Huang, Jing‐Kai, Wan, Yi, Fu, Jui‐Han, Zhang, Xixiang, Chang, Wen‐Hao, Muller, David A., Takenobu, Taishi, Tung, Vincent, Li, Lain‐Jong
Format: Article
Language:English
Subjects:
2D materials
chemical vapor deposition
CMOS
Dissimilar metals
Heterojunctions
Materials science
Materials selection
molybdenum diselenide
selective growth
transition metal dichalcogenides
tungsten diselenide
Two dimensional materials
Vapor pressure
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Summary:A method to concurrently and location‐selectively grow dissimilar transition‐metal dichalcogenides (TMDs) is of high importance for next‐generation 2D, nonsilicon electronics. In article number 1900861, Vincent Tung, Lain‐Jong Li, and co‐workers demonstrate that the precise control of transition‐metal‐precursor vapor pressure renders successful lateral and vertical heterojunction growth, as well as growth of p‐ and n‐type TMDs at desired locations, providing a new strategy toward future (opto)electronic applications.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201970132