Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy

It is demonstrated that the N-polarity of GaN nanowires (NWs) spontaneously nucleated on Si (111) by molecular beam epitaxy can be reversed by intercalation of an Al- or a Ga-oxynitride thin layer. The polarity change has been assessed by a combination of chemical etching, Kelvin probe force microsc...

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Bibliographic Details
Published in:Applied physics letters 2019-04, Vol.114 (17)
Main Authors: Concordel, Alexandre, Jacopin, Gwénolé, Gayral, Bruno, Garro, Núria, Cros, Ana, Rouvière, Jean-Luc, Daudin, Bruno
Format: Article
Language:English
Subjects:
Applied physics
Cathodoluminescence
Chemical etching
Condensed Matter
Engineering Sciences
Epitaxial growth
Gallium nitrides
Materials
Materials Science
Microscopy
Molecular beam epitaxy
Nanowires
Optics
Organic chemistry
Photoluminescence
Photonic
Physics
Polarity
Substrates
Transmission electron microscopy
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Summary:It is demonstrated that the N-polarity of GaN nanowires (NWs) spontaneously nucleated on Si (111) by molecular beam epitaxy can be reversed by intercalation of an Al- or a Ga-oxynitride thin layer. The polarity change has been assessed by a combination of chemical etching, Kelvin probe force microscopy, cathodo- and photoluminescence spectroscopy, and transmission electron microscopy experiments. Cathodoluminescence of the Ga-polar NW section exhibits a higher intensity in the band edge region, consistent with a reduced incorporation of chemical impurities. The polarity reversal method we propose opens the path to the integration of optimized metal-polar NW devices on any kind of substrate.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5094627