Fabrication of a p-type Cu2O thin-film via UV-irradiation of a patternable molecular-precursor film containing Cu(II) complexes

•Cu2O crystal formation by UV-irradiation onto the molecular precursor film involving Cu(II) complexes at room temperature.•Novel patterning method utilizing water as the remover of the selective portion UV-shielded by a Na-free glass plate.•Fabrication of patterned thin film consisting of p-type Cu...

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Bibliographic Details
Published in:Journal of crystal growth 2019-03, Vol.509, p.112-117
Main Authors: Wu, Hsiang-Jung, Tomiyama, Nobuki, Nagai, Hiroki, Sato, Mitsunobu
Format: Article
Language:English
Subjects:
A1. Crystallites
A3. Molecular precursor method
Annealing
B1. Cuprous Oxides
B1. Inorganic compounds
B1. Nanomaterials
B2. Semiconducting materials
Carrier density
Copper oxides
Crystallization
Ethylenediamine
Gas flow
Glass plates
Hall effect
Hole mobility
Irradiation
Precursors
Spin coating
Submerging
Thin films
Ultraviolet radiation
X-ray diffraction
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Summary:•Cu2O crystal formation by UV-irradiation onto the molecular precursor film involving Cu(II) complexes at room temperature.•Novel patterning method utilizing water as the remover of the selective portion UV-shielded by a Na-free glass plate.•Fabrication of patterned thin film consisting of p-type Cu2O crystals, with high mobility of positive charge. A patterned p-type Cu2O thin-film was fabricated using 4-mW cm−2 ultraviolet (UV) irradiation onto a preheated precursor-film formed on a Na-free glass by spin-coating a solution containing Cu(II) complexes of propylamine and ethylenediamine, and post-annealing. After a small Na-free glass plate was placed on the spin-coated and preheated precursor-film to provide a UV-shielded area, the film was UV-irradiated for 6 h at room temperature. X-ray diffraction measurement indicated that the UV-irradiation converted the Cu(II) complexes to crystallized Cu2O. The patterned film obtained by removal of the UV-shielded portion with immersion into water was then post-annealed at 400 °C for 3 min in an Ar-gas flow. The Hall effect measurement of the resultant film of a 90 nm thickness showed that the electrical resistivity, carrier concentration, and hole mobility were 1.4(2) × 102 Ω cm, 8(3) × 1016 cm−3, and 0.9(3) cm2 V−1 s−1, respectively.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2018.12.036