Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Due to its significant applications in many relevant fields, light detection in the solar‐blind deep‐ultraviolet (DUV) wavelength region is a subject of great interest for both scientific and industrial communities. The rapid advances in preparing high‐quality ultrawide‐bandgap (UWBG) semiconductors...

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Bibliographic Details
Published in:Advanced functional materials 2019-02, Vol.29 (9), p.n/a
Main Authors: Xie, Chao, Lu, Xing‐Tong, Tong, Xiao‐Wei, Zhang, Zhi‐Xiang, Liang, Feng‐Xia, Liang, Lin, Luo, Lin‐Bao, Wu, Yu‐Cheng
Format: Article
Language:English
Subjects:
Boron nitride
deep ultraviolet
Diamonds
Gallium oxides
light detection
Materials science
optoelectronic devices
Photometers
Semiconductors
solar‐blind
Ultraviolet detectors
ultrawide‐bandgap semiconductors
Wide bandgap semiconductors
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Summary:Due to its significant applications in many relevant fields, light detection in the solar‐blind deep‐ultraviolet (DUV) wavelength region is a subject of great interest for both scientific and industrial communities. The rapid advances in preparing high‐quality ultrawide‐bandgap (UWBG) semiconductors have enabled the realization of various high‐performance DUV photodetectors (DUVPDs) with different geometries, which provide an avenue for circumventing numerous disadvantages in traditional DUV detectors. This article presents a comprehensive review of the applications of inorganic UWBG semiconductors for solar‐blind DUV light detection in the past several decades. Different kinds of DUVPDs, which are based on varied UWBG semiconductors including Ga2O3, MgxZn1−xO, III‐nitride compounds (AlxGa1−xN/AlN and BN), diamond, etc., and operate on different working principles, are introduced and discussed systematically. Some emerging techniques to optimize device performance are addressed as well. Finally, the existing techniques are summarized and future challenges are proposed in order to shed light on development in this critical research field. Recent advances in developing solar‐blind deep ultraviolet light (DUV) photodetectors based on various inorganic ultrawide‐bandgap semiconductors are reviewed, such as Ga2O3, MgxZn1−xO, III‐nitride compounds (AlxGa1−xN/AlN and BN), and diamonds.
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.201806006