Depth Profiling of Organic Films with X-ray Photoelectron Spectroscopy Using C^sub 60^+ and Ar+ Co-Sputtering

By sputtering organic films with 10 kV, 10 nA ... and 0.2 kV, 300 nA ... ion beams concurrently and analyzing the newly exposed surface with X-ray photoelectron spectroscopy, organic thin-film devices including an organic light-emitting diode and a polymer solar cell with an inverted structure are p...

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Bibliographic Details
Published in:Analytical chemistry (Washington) 2008-05, Vol.80 (9), p.3412
Main Authors: Yu, Bang-Ying, Chen, Ying-Yu, Wang, Wei-Ben, Hsu, Mao-Feng, Tsai, Shu-Ping, Lin, Wei-Chun, Lin, Yu-Chin, Jou, Jwo-Huei, Chu, Chih-Wei, Shyue, Jing-Jong
Format: Article
Language:English
Subjects:
Analytical chemistry
Ion beams
Ions
Polymers
Spectrum analysis
Thin films
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Summary:By sputtering organic films with 10 kV, 10 nA ... and 0.2 kV, 300 nA ... ion beams concurrently and analyzing the newly exposed surface with X-ray photoelectron spectroscopy, organic thin-film devices including an organic light-emitting diode and a polymer solar cell with an inverted structure are profiled. The chemical composition and the structure of each layer are preserved and clearly observable. Although ... sputtering is proven to be useful for analyzing organic thin-films, thick organic-devices cannot be profiled without the low-energy ... beam co-sputtering due to the nonconstant sputtering rate of the ... beam. Various combinations of ion-beam doses are studied in this research. It is found that a high dosage of the ... beam interferes with the ... ion beam, and the sputtering rate decreases with increasing the total ion current. The results suggest that the low-energy single-atom projectile can disrupt the atom deposition from the cluster ion beams and greatly extend the application of the cluster ion-sputtering. By achievement of a steady sputtering rate while minimizing the damage accumulation, this research paves the way to profiling soft matter and organic electronics. (ProQuest: ... denotes formulae/symbols omitted.)
ISSN:0003-2700
1520-6882