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A Compact Gate Control and Voltage-Balancing Circuit for Series-Connected SiC MOSFETs and Its Application in a DC Breaker
This paper presents a novel compact circuit combining function of gate control and voltage balancing for series-connected silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET). Two series-connected SiC MOSFETs with the proposed circuit only require a single standard gate d...
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Published in: | IEEE transactions on industrial electronics (1982) 2017-10, Vol.64 (10), p.8299-8309 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | This paper presents a novel compact circuit combining function of gate control and voltage balancing for series-connected silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET). Two series-connected SiC MOSFETs with the proposed circuit only require a single standard gate driver to achieve the gate control and voltage balancing during both steady-state and switching transition. Moreover, the proposed circuit is only composed of ten passive components. Therefore, the proposed circuit provides a low-cost and highly reliable method to increase the blocking voltage of the SiC MOSFET. The operation principles of the proposed circuit are theoretically analyzed. In addition, the high-blocking-voltage device is not only required in switching-mode power supply (SMPS) but also in dc-breaker applications. The proposed circuit is then modified to make it suitable to the dc-breaker applications. The simulation and experimental results validate the effectiveness and superiority of the proposed circuit in both SMPS and dc-breaker applications. |
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ISSN: | 0278-0046 1557-9948 |
DOI: | 10.1109/TIE.2017.2711579 |