Comparative Analysis on Conducted CM EMI Emission of Motor Drives: WBG Versus Si Devices

Silicon carbide (SiC) MOSFETs and gallium nitride (GaN) high-electron mobility transistors are perceived as future replacements for Si IGBTs and MOSFETs in medium- and low-voltage drives due to their low conduction and switching losses. However, it is widely believed that the already significant con...

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Bibliographic Details
Published in:IEEE transactions on industrial electronics (1982) 2017-10, Vol.64 (10), p.8353-8363
Main Authors: Di Han, Silong Li, Yujiang Wu, Wooyoung Choi, Sarlioglu, Bulent
Format: Article
Language:English
Subjects:
Common mode (CM)
Electric noise
Electromagnetic interference
electromagnetic interference (EMI)
Electron mobility
Emission analysis
Emissions control
gallium nitride (GaN)
Gallium nitrides
Inverters
MOSFET
MOSFETs
motor drive
Motor drives
Motors
Pulse duration modulation
Semiconductor devices
Silicon
Silicon carbide
silicon carbide (SiC)
Switches
Switching
Transistors
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Summary:Silicon carbide (SiC) MOSFETs and gallium nitride (GaN) high-electron mobility transistors are perceived as future replacements for Si IGBTs and MOSFETs in medium- and low-voltage drives due to their low conduction and switching losses. However, it is widely believed that the already significant conducted common-mode (CM) electromagnetic interference (EMI) emission of motor drives will be further exacerbated by the high-speed switching operation of these new devices. Hence, this paper investigates and quantifies the increase in the conducted CM EMI emission of a pulse width modulation inverter-based motor drive when SiC and GaN devices are adopted. Through an analytical approach, the results reveal that the influence of dv/dt on the conducted CM emission is generally limited. On the other hand, the influence of switching frequency is more significant. Lab tests are also conducted to verify the analysis.
ISSN:0278-0046
1557-9948
DOI:10.1109/TIE.2017.2681968