The effect of Zn doping on CdO thin films grown by SILAR method at room temperature

In this study, undoped and 0.3%, 1.7% and 4.5% Zn doped CdO thin films were grown by successive ionic layer adsorption and reaction (SILAR) method on the soda lime glass substrate at room temperature. X-ray diffractometer (XRD), ultraviolet–visible spectrometer, scanning electron microscope (SEM), X...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2019-01, Vol.552, p.119-123
Main Authors: Güney, Harun, İskenderoğlu, Demet
Format: Article
Language:English
Subjects:
Doping
Glass substrates
Morphology
Nanostructured materials
Optical properties
Photoelectrons
Photoluminescence
Raman
Raman spectra
Room temperature
SILAR
Soda-lime glass
Temperature
Thin films
X ray photoelectron spectroscopy
X-ray diffraction
Zn doped CdO
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Summary:In this study, undoped and 0.3%, 1.7% and 4.5% Zn doped CdO thin films were grown by successive ionic layer adsorption and reaction (SILAR) method on the soda lime glass substrate at room temperature. X-ray diffractometer (XRD), ultraviolet–visible spectrometer, scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS), Raman and Photoluminescence (PL) spectrometer measurements of the samples were taken to observe how the Zn doping effects on the structural, optical and morphological properties of CdO. XRD measurements show that the samples have the cubic structure. It was observed that calculated by the absorption measurements band gaps varied from 1.62 eV to 2.66 eV with changing Zn dopant in the CdO structure. It was observed that the samples surface morphologies were affected by Zn-doping and its rate. The Raman spectra of undoped and Zn doped CdO thin films were observed that 288 cm−1, 557 cm−1, 937 cm−1. The PL spectrum showed that the PL intensity increases with Zn doping in CdO. The PL spectra showed that Zn ions were located in the structure of CdO. •The first study on Zn doped CdO thin film on glass substrate was grown by SILAR method at room temperature.•Zn doping rate was 0.3%, 1.7%, 4.5% in CdO.•The Zn concentration increases, the intensity of the emission peak also increases.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2018.09.045