Composition dependence of energy storage properties of antiferroelectric (Pb,Y)(Sn,Zr)O^sub 3^ thin film capacitors

The antiferroelectric properties and energy storage performance of (Pb0.02,Y0.98)(Sn x ,Zr1− x )O3 (0 ≤ x ≤ 0.6) thin films fabricated by chemical solution deposition (CSD) were investigated. The recoverable energy storage density U reco linearly decreased from 15.9 J/cm3 at x = 0 to 8.5 J/cm3 at x...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 2018-11, Vol.57 (11), p.11UF08
Main Authors: Fukuda, Shigeki, Hashizume, Yoichiro, Nakajima, Takashi, Okamura, Soichiro
Format: Article
Language:English
Subjects:
Antiferroelectricity
Dependence
Electric fields
Energy
Energy storage
Lead
Organic chemistry
Substitutes
Thin films
Tin
Zirconium
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The antiferroelectric properties and energy storage performance of (Pb0.02,Y0.98)(Sn x ,Zr1− x )O3 (0 ≤ x ≤ 0.6) thin films fabricated by chemical solution deposition (CSD) were investigated. The recoverable energy storage density U reco linearly decreased from 15.9 J/cm3 at x = 0 to 8.5 J/cm3 at x = 60 at. %. The energy storage efficiency η increased with increasing x up to 40 at. % and showed a maximum of 68.4% at x = 20 at. %. Time domain measurements of the charge response induced by an electric field pulse were performed to evaluate the energy performance of charging and discharging processes. The average discharging power density after applying E = 380 kV/cm was 4.4 kW/cm3 and the maximum discharging power density was evaluated to be 740 kW/cm3. The Sn-substituted (Pb,Y)(Sn x ,Zr)O3 thin films showed a well-defined antiferroelectric property and the 20 at. % Sn-substituted thin film exhibited great energy performance in this study.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.57.11UF08