P‐6.6: Fabrication of Cu BCE‐structure IGZO TFTs for 85‐inch 8K4K 120Hz GOA LCD Display

The electrical characteristics of the back‐channel‐etch (BCE) configuration based amorphous indium–gallium–zinc oxide (a‐IGZO) thin‐film transistors (TFTs) were studied. The passivation layer ,the selection of color filter material and design of GOA TFT structure were modified for lessening the infl...

Full description

Saved in:
Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2018-04, Vol.49 (S1), p.611-614
Main Authors: Wang, Xiao, Ge, Shi-Min, Li, Shan, Jiang, M, Meng, Yan-Hong, Wu, Wei, Zhu, Feng, Li, Gong-Tan, Liu, Jing-Jing, Shi, Long-Qiang, Zhao, Feng, Park, D, Chiu, Chung-Yi, Lee, Chia-Yu
Format: Article
Language:English
Subjects:
85-inch
8K4K
BCE a-IGZO TFT
Design modifications
Gallium
GOA
Indium gallium zinc oxide
Liquid crystal displays
Semiconductor devices
Transistors
Water chemistry
Zinc oxide
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The electrical characteristics of the back‐channel‐etch (BCE) configuration based amorphous indium–gallium–zinc oxide (a‐IGZO) thin‐film transistors (TFTs) were studied. The passivation layer ,the selection of color filter material and design of GOA TFT structure were modified for lessening the influence of H2O molecules adsorbing on the back channel of the BCE‐structure. The negative and positive bias temperature stress results revealed that the optimized GOA TFTs exhibited good device reliability. Finally, a high performance 85‐inch 8K4K 120Hz GOA LCD was demonstrated.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.12797