Monolithically Integrated Multilayer Silicon Nitride-on-Silicon Waveguide Platforms for 3-D Photonic Circuits and Devices

In this paper, we review and provide additional details about our progress on multilayer silicon nitride (SiN)-on-silicon (Si) integrated photonic platforms. In these platforms, one or more SiN waveguide layers are monolithically integrated onto a Si photonic layer. This paper focuses on the develop...

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Bibliographic Details
Published in:	Proceedings of the IEEE 2018-12, Vol.106 (12), p.2232-2245
Main Authors:	Sacher, Wesley D., Goodwill, Dominic, Bernier, Eric, Lo, Patrick Guo-Qiang, Poon, Joyce K. S., Mikkelsen, Jared C., Huang, Ying, Mak, Jason C. C., Yong, Zheng, Luo, Xianshu, Li, Yu, Dumais, Patrick, Jiang, Jia
Format:	Article
Language:	eng
Subjects:	Integrated circuits Interlayers Modulators Multilayers Nonhomogeneous media Optical losses Optical waveguides Photonics Platforms Silicon compounds Silicon nitride Silicon photonics Tuners Waveguide transitions
Online Access:	Get full text
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Summary:	In this paper, we review and provide additional details about our progress on multilayer silicon nitride (SiN)-on-silicon (Si) integrated photonic platforms. In these platforms, one or more SiN waveguide layers are monolithically integrated onto a Si photonic layer. This paper focuses on the development of three-layer platforms for the O- and SCL-bands for very large-scale photonic integrated circuits requiring hundreds or thousands of waveguide crossings. Low-loss interlayer transitions and ultralow-loss waveguide crossings have been demonstrated, along with bilevel and trilevel grating couplers for fiber-to-chip coupling. The SiN and Si passive devices have been monolithically integrated with high-efficiency optical modulators, photodetectors, and thermal tuners in a single photonic platform.
ISSN:	0018-9219 1558-2256