Strain-induced direct band gap shrinkage in local Ge-on-insulator structures fabricated by lateral liquid-phase epitaxy

Direct band gap shrinkage in Ge-on-insulator (GOI) structures fabricated by lateral liquid-phase epitaxy (LLPE) was investigated by means of micro(μ)-photoluminescence and μ-Raman spectroscopy. The LLPE method, based on the rapid thermal process, was found to be an effective and feasible way to prod...

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Bibliographic Details
Published in:Applied physics letters 2014-01, Vol.104 (3)
Main Authors: Matsue, Masahiro, Yasutake, Yuhsuke, Fukatsu, Susumu, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji
Format: Article
Language:English
Subjects:
Applied physics
Crystallization
Emission analysis
Energy gap
Liquid phase epitaxy
Liquid phases
Melting points
Optical properties
Photoluminescence
Raman spectroscopy
Red shift
Shrinkage
Spectrum analysis
Strain analysis
Temperature dependence
Tensile strain
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Summary:Direct band gap shrinkage in Ge-on-insulator (GOI) structures fabricated by lateral liquid-phase epitaxy (LLPE) was investigated by means of micro(μ)-photoluminescence and μ-Raman spectroscopy. The LLPE method, based on the rapid thermal process, was found to be an effective and feasible way to produce highly strained local GOI structures. We observed a significant redshift of direct gap emission amounting to 45 meV from the tensile-strained GOI layer. Strain analysis and temperature dependent PL spectra indicated that a direct band gap shrinkage was mainly due to a tensile strain of about 0.4% induced by rapid crystallization from the Ge melting point during the LLPE process. The local optical properties along the LLPE-grown GOI wire were examined and discussed on the basis of μ-PL mapping images.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4862890