Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC

The orientation dependence of the piezoresistive effect of p-type single crystalline 3C-SiC thin film grown on a (100)Si wafer was characterized. The longitudinal, transverse gauge factors in [100] orientation, and longitudinal gauge factor in [110] orientation were found to be 5.8, −5.2, and 30.3,...

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Bibliographic Details
Published in:Applied physics letters 2014-03, Vol.104 (11)
Main Authors: Phan, Hoang-Phuong, Viet Dao, Dzung, Tanner, Philip, Wang, Li, Nguyen, Nam-Trung, Zhu, Yong, Dimitrijev, Sima
Format: Article
Language:English
Subjects:
Applied physics
Coefficients
Crystal structure
Crystallinity
Crystallography
Dependence
Orientation effects
Silicon carbide
Thin films
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Summary:The orientation dependence of the piezoresistive effect of p-type single crystalline 3C-SiC thin film grown on a (100)Si wafer was characterized. The longitudinal, transverse gauge factors in [100] orientation, and longitudinal gauge factor in [110] orientation were found to be 5.8, −5.2, and 30.3, respectively. The fundamental piezoresistive coefficients π11, π12, and π44 of p-type 3C-SiC were obtained to be 1.5 × 10−11 Pa−1, −1.4 × 10−11 Pa−1, and 18.1 × 10−11 Pa−1, respectively. From these coefficients, the piezoresistive effect in any crystallographic orientation in p-type single crystalline 3C-SiC can be estimated, which is very valuable in designing micro-mechanical sensors.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4869151