A study of nonlinear lasing dynamics of an InGaAs/AlGaAs/GaAs heterostructure power laser-thyristor emitting at 905 nm

The results obtained demonstrate that the lasing dynamics reflects the current dynamics formed as a result of complex nonlinear couplings within the laser-thyristor heterostructure. The observed specific features mainly result from the appearance of new channels for generation of excess carriers in...

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Bibliographic Details
Published in:Journal of applied physics 2014-08, Vol.116 (8)
Main Authors: Slipchenko, S. O., Podoskin, A. A., Rozhkov, A. V., Pikhtin, N. A., Tarasov, I. S., Bagaev, T. A., Konyaev, V. P., Ladugin, M. A., Marmalyuk, A. A., Padalitsa, A. A., Simakov, V. A.
Format: Article
Language:English
Subjects:
Active regions (lasers)
Applied physics
Avalanches
Channels
Couplings
Heterostructures
Indium gallium arsenides
Lasers
Lasing
Spontaneous emission
Thyristors
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Summary:The results obtained demonstrate that the lasing dynamics reflects the current dynamics formed as a result of complex nonlinear couplings within the laser-thyristor heterostructure. The observed specific features mainly result from the appearance of new channels for generation of excess carriers in the p-base. These channels enhance the main optical activation channel formed by the photogeneration due to the absorption of the spontaneous emission from the active region of the laser part of the heterostructure. The additional channels of excess carrier generation may have an optical nature in the case of scattered laser light upon appearance of new high-Q modes. For nearly critical blocked voltages, generation of carriers can be initiated by an avalanche multiplication of photogenerated carriers.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4893956