Recombination dynamics in InxGa1−xN quantum wells—Contribution of excited subband recombination to carrier leakage

The recombination dynamics of InxGa1−xN single quantum wells are investigated. By comparing the photoluminescence (PL) decay spectra with simulated emission spectra obtained by a Schrödinger-Poisson approach, we give evidence that recombination from higher subbands contributes the emission of the qu...

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Bibliographic Details
Published in:Applied physics letters 2014-11, Vol.105 (18)
Main Authors: Schulz, T, Nirschl, A, Drechsel, P, Nippert, F, Markurt, T, Albrecht, M, Hoffmann, A
Format: Article
Language:English
Subjects:
Applied physics
Carrier density
Carrier recombination
Charge density
Current carriers
Decay
Emission analysis
Emission spectra
Photoluminescence
Probability density functions
Quantum wells
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Summary:The recombination dynamics of InxGa1−xN single quantum wells are investigated. By comparing the photoluminescence (PL) decay spectra with simulated emission spectra obtained by a Schrödinger-Poisson approach, we give evidence that recombination from higher subbands contributes the emission of the quantum well at high excitation densities. This recombination path appears as a shoulder on the high energy side of the spectrum at high charge carrier densities and exhibits decay in the range of ps. Due to the lower confinement of the excited subband states, a distinct proportion of the probability density function lies outside the quantum well, thus contributing to charge carrier loss. By estimating the current density in our time resolved PL experiments, we show that the onset of this loss mechanism occurs in the droop relevant regime above 20 A/cm2.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4901256