Investigation of negative photoconductivity in p-type Pb1-xSnxTe film

We investigated the negative photoconductivity (NPC) effect that was observed in a p-type Pb1-xSnxTe film for temperatures varying from 300 K down to 85 K. We found that this effect is a consequence of defect states located in the bandgap which act as trapping levels, changing the relation between g...

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Bibliographic Details
Published in:Applied physics letters 2017-01, Vol.110 (4)
Main Authors: Tavares M A B, da Silva M J, Peres, M L, de Castro S, Soares D A W, Okazaki, A K, nari, C I, Rappl P H O, Abramof, E
Format: Article
Language:English
Subjects:
Applied physics
Photoconductivity
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Summary:We investigated the negative photoconductivity (NPC) effect that was observed in a p-type Pb1-xSnxTe film for temperatures varying from 300 K down to 85 K. We found that this effect is a consequence of defect states located in the bandgap which act as trapping levels, changing the relation between generation and recombination rates. Theoretical calculations predict contributions to the NPC from both conduction and valence bands, which are in accordance with the experimental observations.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4974539