Understanding ferroelectric Al:HfO2 thin films with Si-based electrodes for 3D applications

Ferroelectric hafnium oxide is a promising candidate for logic and memory applications as it maintains excellent ferroelectric properties at nm-size ensuring compatibility with state of the art semiconductor manufacturing. Most of the published papers report on the study of this material through Met...

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Bibliographic Details
Published in:Journal of applied physics 2017-05, Vol.121 (20)
Main Authors: Florent, K., Lavizzari, S., Popovici, M., Di Piazza, L., Celano, U., Groeseneken, G., Van Houdt, J.
Format: Article
Language:English
Subjects:
Aluminum
Applied physics
Capacitors
Electrode polarization
Electrodes
Ferroelectric materials
Ferroelectricity
Hafnium oxide
Insulators
Semiconductor devices
Silicon
Silicon transistors
State of the art
Thin films
Titanium nitride
Transistors
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Summary:Ferroelectric hafnium oxide is a promising candidate for logic and memory applications as it maintains excellent ferroelectric properties at nm-size ensuring compatibility with state of the art semiconductor manufacturing. Most of the published papers report on the study of this material through Metal-Insulator-Metal capacitors or Metal-Insulator-Silicon transistors. However, for 3D vertical transistors in which both the channel and gate are polysilicon, the case of silicon-based electrodes cannot be ignored. In this paper, we report the fabrication of various ferroelectric capacitors with silicon (S) based conductive layers and titanium nitride metal (M) electrodes using aluminum doped hafnium oxide (I). The ferroelectric device with silicon-based electrodes shows superior polarization and steeper switching. These results pave the way toward 3D integration for potential 3D NAND replacement.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4984068