The interfacial layer effect on bi-stable resistive switching phenomenon in MnOx thin film

Resistive switching behavior of MnOx thin films was comparatively investigated. Two different top electrode materials of Ti and Pt over the common MnOx/Pt structure showed significantly distinct electrical endurance characteristics. Various structural and electrical analyses revealed that the interf...

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Bibliographic Details
Published in:Applied physics letters 2015-08, Vol.107 (5)
Main Authors: Yang, Min Kyu, Kim, Gun Hwan, Ju, Hyunsu, Lee, Jeon-Kook, Ryu, Han-Cheol
Format: Article
Language:English
Subjects:
Applied physics
Durability
Electrode materials
Endurance
Fatigue tests
Switching
Thin films
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Summary:Resistive switching behavior of MnOx thin films was comparatively investigated. Two different top electrode materials of Ti and Pt over the common MnOx/Pt structure showed significantly distinct electrical endurance characteristics. Various structural and electrical analyses revealed that the interfacial oxide layer associated with Ti in the Ti/MnOx/Pt structure affected the improved electrical endurance characteristic. Finally, an 8 × 8 crossbar array with 100 nm-width interconnection line was fabricated to confirm the scalability and the stability of the resistive switching performances in the Ti/MnOx/Pt structure.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4928249