Highly sensitive phototransistor based on GaSe nanosheets

Phototransistors based on two dimensional semiconductors have drawn increasing attention in recent years. GaSe is a typical semiconductor with a layered structure. In this work, the ultrathin GaSe nanosheets were exfoliated from commercially available crystals using a micromechanical cleavage techni...

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Bibliographic Details
Published in:Applied physics letters 2015-10, Vol.107 (14)
Main Authors: Huang, Hai, Wang, Peng, Gao, Yanqing, Wang, Xudong, Lin, Tie, Wang, Jianlu, Liao, Lei, Sun, Jinglan, Meng, Xiangjian, Huang, Zhiming, Chen, Xiaoshuang, Chu, Junhao
Format: Article
Language:English
Subjects:
Applied physics
Dark current
Field effect transistors
Nanosheets
Optoelectronics
Phototransistors
Semiconductor devices
Silicon dioxide
Silicon substrates
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Summary:Phototransistors based on two dimensional semiconductors have drawn increasing attention in recent years. GaSe is a typical semiconductor with a layered structure. In this work, the ultrathin GaSe nanosheets were exfoliated from commercially available crystals using a micromechanical cleavage technique. Then, the nanosheets were used to fabricate field effect transistors (FETs) on Si/SiO2 substrates with interdigitated electrodes. The electrical and optoelectronic properties of the FET were characterized. The phototransistor based on a GaSe nanosheet had a high photoresponsivity (∼2200 mA/W) and a high Iphoto/Idark (photoresponse current over dark current) ratio of almost 103.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4933034