Fabrication and characterization of p+-i-p+ type organic thin film transistors with electrodes of highly doped polymer

Organic thin film transistors (OTFTs) have been explored because of their advantageous features such as light-weight, flexible, and large-area. For more practical application of organic electronic devices, it is very important to realize OTFTs that are composed only of organic materials. In this pap...

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Bibliographic Details
Published in:Journal of applied physics 2016-04, Vol.119 (15)
Main Authors: Tadaki, Daisuke, Ma, Teng, Zhang, Jinyu, Iino, Shohei, Hirano-Iwata, Ayumi, Kimura, Yasuo, Rosenberg, Richard A., Niwano, Michio
Format: Article
Language:English
Subjects:
Aluminum
Applied physics
Carrier injection
Electrical measurement
Electrodes
Electronic devices
Gold
Organic materials
PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
Semiconductor devices
Silicon dioxide
Tetracyanoquinodimethane
Thin film transistors
Thin films
Transistors
Weight reduction
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Summary:Organic thin film transistors (OTFTs) have been explored because of their advantageous features such as light-weight, flexible, and large-area. For more practical application of organic electronic devices, it is very important to realize OTFTs that are composed only of organic materials. In this paper, we have fabricated p+-i-p+ type of OTFTs in which an intrinsic (i) regioregular poly (3-hexylthiophene) (P3HT) layer is used as the active layer and highly doped p-type (p+) P3HT is used as the source and drain electrodes. The 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) was used as the p-type dopant. A fabricating method of p+-i-p+ OTFTs has been developed by using SiO2 and aluminum films as capping layers for micro-scaled patterning of the p+-P3HT electrodes. The characteristics of the OTFTs were examined using the photoelectron spectroscopy and electrical measurements. We demonstrated that the fabricated p+-i-p+ OTFTs work with carrier injection through a built-in potential at p+/i interfaces. We found that the p+-i-p+ OTFTs exhibit better FET characteristics than the conventional P3HT-OTFT with metal (Au) electrodes, indicating that the influence of a carrier injection barrier at the interface between the electrode and the active layer was suppressed by replacing the metal electrodes with p+-P3HT layers.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4946888