Quantum confinement in EuO heterostructures

Quantum wells are created from ultrathin single-crystalline EuO layers to study the evolution of the optical band gap down to the single nanometer regime. We find that the EuO band gap is indirect—independent of quantum well thickness—and increases from 1.19 eV for bulk-like (d = 32 nm) to ≈1.4 eV i...

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Bibliographic Details
Published in:Applied physics letters 2016-11, Vol.109 (20)
Main Authors: Prinz, Günther M., Gerber, Timm, Lorke, Axel, Müller, Martina
Format: Article
Language:English
Subjects:
Applied physics
Band gap
Energy gap
Heterostructures
Quantum confinement
Quantum wells
Single crystals
Thin films
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Summary:Quantum wells are created from ultrathin single-crystalline EuO layers to study the evolution of the optical band gap down to the single nanometer regime. We find that the EuO band gap is indirect—independent of quantum well thickness—and increases from 1.19 eV for bulk-like (d = 32 nm) to ≈1.4 eV in the ultrathin films (d = 1.1 nm). The observed band-gap widening is a clear sign of a quantum confinement effect, which can be used to control and modify the band gap in EuO-based all-oxide heterostructures.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4966223