Organic non-volatile memory device based on cellulose fibers

[Display omitted] •Demonstration of low-cost organic (cellulose fiber) non-volatile memory device.•Excellent endurance for 6 × 103 resistive switching cycles with 10x memory window.•Data retention is extended for the 3 × 102 seconds without any degradation.•Resistive switching is due to the formatio...

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Bibliographic Details
Published in:Materials letters 2018-12, Vol.232, p.99-102
Main Authors: Rananavare, Anuja P., Kadam, Sunil J., Prabhu, Shivadatta V., Chavan, Sachin S., Anbhule, Prashant V., Dongale, Tukaram D.
Format: Article
Language:English
Subjects:
Biomaterials
Biomedical materials
Cellulose fibers
Electric properties
Electrical properties
Electroforming
Endurance
High resistance
Hysteresis loops
Low resistance
Materials science
Memory devices
Memristive device
Morphology
Organic memory
Resistive switching
Silver
Switching
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Summary:[Display omitted] •Demonstration of low-cost organic (cellulose fiber) non-volatile memory device.•Excellent endurance for 6 × 103 resistive switching cycles with 10x memory window.•Data retention is extended for the 3 × 102 seconds without any degradation.•Resistive switching is due to the formation and breaking of Ag filament. The present manuscript reports the development of Ag/cellulose fibers/Al memory device using the electrospinning technique. The morphological characterization suggested that the active layer is composed of micro-fibers. The developed device shows fingerprint pinched hysteresis loop of the memristive device in I–V plane without any additional electroforming step. An excellent endurance for 6 × 103 resistive switching cycles with 10x memory window is achieved. Furthermore, the data retention capability of the developed device is extended for the 3 × 102 seconds without any observable degradation in the resistance states. The statistical results suggested that the high resistance state loosely distributed whereas tight distribution is observed for low resistance state. The electrical characterization results suggested that the formation and breaking of Ag conductive filament in the active cellulose fiber layer are responsible for the bipolar resistive switching effect. Our results suggested that the cellulose fibers based memristive device is a potential candidate for the organic non-volatile memory application.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2018.08.091