Structural and Luminescence Properties of Ga2O3:Zn Micro‐ and Nanostructures

High quality Zn‐doped monoclinic gallium oxide micro‐ and nanostructures are obtained by a thermal treatment based on vapor–solid (VS) growth mechanism. Nanowires and ribbons are formed, the latter being the more abundant. The microstructural features are assessed by micro‐Raman and transmission ele...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2018-10, Vol.215 (19), p.n/a
Main Authors: López, Iñaki, Alonso‐Orts, Manuel, Nogales, Emilio, Méndez, Bianchi
Format: Article
Language:English
Subjects:
Cathodoluminescence
Crystal structure
Dependence
doping
gallium oxide
Gallium oxides
Heat treatment
Luminescence
Monoclinic lattice
Nanostructure
nanostructures
Nanowires
Optical properties
Photoluminescence
Photons
Single crystals
Temperature
Transmission electron microscopy
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Summary:High quality Zn‐doped monoclinic gallium oxide micro‐ and nanostructures are obtained by a thermal treatment based on vapor–solid (VS) growth mechanism. Nanowires and ribbons are formed, the latter being the more abundant. The microstructural features are assessed by micro‐Raman and transmission electron microscopy revealing their crystal structure properties, such as the [‐110] growth direction for ribbons and being single crystals. In particular, a strong‐scattered light polarization dependence is reflected in the detected Raman modes. Luminescence of both Zn doped and undoped Ga2O3 samples is thoroughly studied by several techniques, exciting light with electrons or photons. Cathodoluminescence (CL) at a wide temperature range reveals that a band centered at around 2.7 eV, assigned to Zn doping in monoclinic Ga2O3, is thermally activated at temperatures above 200 K and dominates at room temperature. Besides, the characteristic bands at 3.4 and 3.0 eV of undoped Ga2O3 are obtained as well but with less relative intensity. Photoluminescence (PL) analysis at room temperature shows a similar set of bands, but slightly redshifted with respect to CL. Their relative intensities are strongly dependent on the excitation conditions and their time decays are studied by time‐resolved PL (TRPL). Zn doping in Ga2O3 is of high interest due to potential applications for electronic and optoelectronic devices. This work reports the study of Ga2O3:Zn micro‐ and nanostructures from the structural and luminescence point of view. Ribbons and nanowires with good crystal quality have been obtained. Their luminescence behavior has been analyzed with different cathodoluminescence and photoluminescence‐based techniques.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201800217