Insulator Materials for Interface Passivation of Cu(In,Ga)Se2 Thin Films

In this work, metal-insulator-semiconductor structures were fabricated in order to study different types of insulators, namely, aluminum oxide (Al 2 O 3 ), silicon nitride, and silicon oxide (SiO x ) to be used as passivation layers in Cu(In,Ga)Se 2 (CIGS) thin-film solar cells. The investigated sta...

Full description

Saved in:
Bibliographic Details
Published in:IEEE journal of photovoltaics 2018-09, Vol.8 (5), p.1313-1319
Main Authors: Cunha, J. M. V., Fernandes, P. A., Hultqvist, A., Teixeira, J. P., Bose, S., Vermang, B., Garud, S., Buldu, D., Gaspar, J., Edoff, M., Leitao, J. P., Salome, P. M. P.
Format: Article
Language:English
Subjects:
Aluminum oxide
Capacitance
Chemical passivation
Copper compounds
Copper indium gallium selenides
Cu(In
Deposition
Electrical properties
field-effect passivation
Ga)Se<named-content xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" content-type="math" xlink:type="simple"> <inline-formula> <tex-math notation="LaTeX"> _{2}</tex-math> </inline-formula> </named-content> (CIGS
Insulators
interface
MIS (semiconductors)
Passivation
Passivity
Photoluminescence
Photovoltaic cells
Polarity
Raman spectra
Resistance
Silicon nitride
Silicon oxides
Solar cells
Sputtering
Surface morphology
Thin films
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this work, metal-insulator-semiconductor structures were fabricated in order to study different types of insulators, namely, aluminum oxide (Al 2 O 3 ), silicon nitride, and silicon oxide (SiO x ) to be used as passivation layers in Cu(In,Ga)Se 2 (CIGS) thin-film solar cells. The investigated stacks consisted of SLG/Mo/CIGS/insulator/Al. Raman scattering and photoluminescence measurements were done to verify the insulator deposition influence on the CIGS surface. In order to study the electrical properties of the CIGS-insulator interface, capacitance versus conductance and voltage ( C - G - V ) measurements were done to estimate the number and polarity of fixed insulator charges ( Q f ). The density of interface defects (Dit) was estimated from capacitance versus conductance and frequency ( C - G - f ) measurements. This study evidences that the deposition of the insulators at high temperatures (300 °C) and the use of a sputtering technique cause surface modification on the CIGS surface. We found that, by varying the SiO x deposition parameters, it is possible to have opposite charges inside the insulator, which would allow its use in different device architectures. The material with lower D it values was Al 2 O 3 when deposited by sputtering.
ISSN:2156-3381
2156-3403
DOI:10.1109/JPHOTOV.2018.2846674