Electrochemical deposition of bulk MoS^sub 2^ thin films for photovoltaic applications

Layered transition metal dichalcogenides (TMDs) materials have shown high potential in many optoelectronic and photovoltaic applications due to their intriguing semiconducting properties. Most noticeably, the layered molybdenum disulfide (MoS2) has drawn much attention because of its unique layer-de...

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Bibliographic Details
Published in:Solar energy materials and solar cells 2018-11, Vol.186, p.165
Main Authors: Hossain, Md Anower, Merzougui, Belabbes A, Alharbi, Fahhad H, Tabet, Nouar
Format: Article
Language:English
Subjects:
Absorption
Carrier density
Electrochemical impedance spectroscopy
Electrochemistry
Electromagnetic absorption
Electron microscopy
Electron mobility
Electrons
Energy dispersive X ray spectroscopy
Energy gap
Light diffraction
Molybdenum
Molybdenum disulfide
Optoelectronics
Photoelectron spectroscopy
Photovoltaic cells
Photovoltaics
Semiconductors
Spectroscopy
Substrates
Sulfur
Thin films
Vacuum
Voltammetry
X-ray diffraction
X-ray spectroscopy
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Summary:Layered transition metal dichalcogenides (TMDs) materials have shown high potential in many optoelectronic and photovoltaic applications due to their intriguing semiconducting properties. Most noticeably, the layered molybdenum disulfide (MoS2) has drawn much attention because of its unique layer-dependent band gap tunability and high electron mobility. A facile non-vacuum electrodeposition approach is used to deposit bulk MoS2 films onto FTO substrate immersed in an aqueous precursor solution of molybdenum and sulfur. The as-deposited and post-treated films are studied using X-ray diffraction, electron microscopy equipped with energy-dispersive x-ray spectroscopy, light absorption measurement, and X-ray photoelectron spectroscopy. Although the obtained gap energy values, 1.3–1.4 eV, of bulk MoS2 are indirect, the measured light absorption characteristic is high, especially above 1.7 eV. Also, electrochemical impedance spectroscopy studies of the films show that carrier concentration in higher than 1015 cm−3.
ISSN:0927-0248