How the Electronic Structure in URu^sub 2^Si^sub 2^ Changes with Temperature: A High-Resolution Compton Scattering Study

We have measured directional Compton profiles on the (001) plane in URu2Si2 single crystal at several temperatures. Two-dimensional electron occupation number densities (2D-EONDs) were obtained from the profiles through electron momentum reconstruction and Lock–Crisp–West folding analyses. We have a...

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Bibliographic Details
Published in:Journal of the Physical Society of Japan 2018-06, Vol.87 (6)
Main Authors: Koizumi, Akihisa, Kubo, Yasunori, Motoyama, Gaku, Yamamura, Tomoo, Sakurai, Yoshiharu
Format: Article
Language:English
Subjects:
Autocorrelation functions
Band structure
Correlation analysis
Crossovers
Elastic scattering
Electric properties
Electronic structure
Electrons
Mathematical models
Reconstruction
Single crystals
Two dimensional models
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Summary:We have measured directional Compton profiles on the (001) plane in URu2Si2 single crystal at several temperatures. Two-dimensional electron occupation number densities (2D-EONDs) were obtained from the profiles through electron momentum reconstruction and Lock–Crisp–West folding analyses. We have also performed band calculations based on 5f-electron itinerant and localized models and derived theoretical 2D-EONDs for comparison. The experimental 2D-EOND at 300 K is well described by the localized model, and the 2D-EOND at 10 K is consistent with the theoretical one based on the itinerant model. The difference between 2D-EONDs at 30 and 100 K reflects a gradual change in the electronic structure, which reveals some of the crossover phenomena from localized to itinerant states. The change from localized to itinerant states is also reflected in a B(r) function, which is obtained in the reconstruction analysis and is an autocorrelation function of the wave function in the position space. The process by which the electronic structure in URu2Si2 changes is demonstrated through a series of experimental results.
ISSN:0031-9015
1347-4073